elektronische bauelemente 2sc3303 5a , 100v npn epitaxial planar silicon transistor 20-aug-2014 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 3 emitter collector 2 a c d h g e f k b j p m rohs compliant product a suffix of -c specifies halogen & lead-free features low collector-to-emitter saturation voltage excllent linearity of hfe high ft fast switching time classification of h fe product-rank 2sc3303-o 2sc3303-y range 70~140 120~240 absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 100 v collector to emitter voltage v ceo 80 v emitter to base voltage v ebo 7 v collector current -continuous i c 5 a collector power dissipation p c 1 w thermal resistance from junction to ambient r ja 125 c / w junction temperature t j 150 c storage temperature t stg -55 ~ 150 c electrical characteristics (t a = 25c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br) cbo 100 - - v i c =100 a, i e =0 collector-emitter breakdown voltage v (br)ceo 80 - - v i c =10ma, i b =0 emitter-base breakdown voltage v (br)ebo 7 - - v i e =100 a, i c =0 collector cut-off current i cbo - - 1 a v cb =100v, i e =0 emitter cut-off current i ebo - - 1 a v eb =7v, i c =0 70 - 240 v ce =1v, i c =1a dc current gain h fe 40 - - v ce =1v, i c =3a collector-emitter saturation voltage v ce(sat) - - 0.4 v i c =3a, i b =150ma base -emitter saturation voltage v be(sat) - - 1.2 v i c =3a, i b =150ma transition frequency f t - 20 - mhz v ce =4v, i c =1a collector output capacitance c ob - 80 - pf v cb =10v, i e =0, f=1mhz to-251 millimeter millimeter ref. min. max. ref. min. max. a 6.35 6.80 g 5.40 6.25 b 4.90 5.50 h 0.85 1.50 c 2.15 2.40 j 2.30 d 0 .43 0.90 k 0.60 1.05 e 6.50 7.50 m 0.50 0.90 f 7.20 9.65 p 0.43 0.62
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